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HAT2053M
Silicon N Channel Power MOS FET Power Switching
ADE-208-755B(Z) Preliminary, 3rd. Edition Dec. 1, 1998 Features
* * * * Low on-resistance Low drive current High density mounting 2.5V gate drive device can be driven from 3V source
Outline
TSOP-6
4 5 6 3 2 1
12 5 6 DD D D
3 G
4 Source 3 Gate 1, 2, 5, 6 Drain
S 4
HAT2053M
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID*
2 1
Ratings 20 12 6.1 24.4 6.1
2 3
Unit V V A A A W W C C
I D(pulse) * I DR*
2
Pch (pulse)*
2.0 1.05 150 -55 to +150
Pch (continuous) * Channel temperature Storage temperature Tch Tstg
Notes: 1. PW 10s, duty cycle 1 % 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW 5s,Ta=25C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25C
Electrical Characteristics (Ta = 25C)
Item Symbol Min 20 -- -- 0.4 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 28 37 11 570 220 160 15 100 90 105 0.95 (50) Max -- 0.1 1 1.4 33 48 -- -- -- -- -- -- -- -- -- -- Unit V A A V m m S pF pF pF ns ns ns ns V ns IF = 6.1A, VGS = 0 *1 IF = 6.1A, VGS = 0 diF/ dt =20A/s Test Conditions I D = 10mA, VGS = 0 VGS = 12V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10V, I D = 1mA I D = 3A, VGS = 4.5V *1 I D = 3A, VGS = 2.5V *1 I D = 3A, VDS = 10V *1 VDS = 10V VGS = 0 f = 1MHz VGS = 4.5V, ID = 3A RL = 3.3 Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
2
HAT2053M
Package Dimensions (Unit: mm)
1.6} 0.15
0.6
0.3} 0.1
0.15 - 0.05
+ 0.10
2.8} 0.2
0 ~ 0.1
1.0
1.0
2.95} 0.15
0.2
0.6 0.9} 0.1
Hitachi Code EIAJ JEDEC
TSOP-6 -
3
HAT2053M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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